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Download III-V Nitride Semiconductors: Applications and Devices (Optoelectronic Properties of Semiconductors and Superlattice) djvu

Download III-V Nitride Semiconductors: Applications and Devices (Optoelectronic Properties of Semiconductors and Superlattice) djvu

by Edward T. Yu

Author: Edward T. Yu
Subcategory: Engineering
Language: English
Publisher: CRC Press; 1 edition (September 6, 2002)
Pages: 714 pages
Category: Engineering and Transport
Rating: 4.1
Other formats: lit doc mobi docx

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III-V Nitride Semiconductors book.

Items related to III-V Nitride Semiconductors: Applications and Devices. Edward T. Yu III-V Nitride Semiconductors: Applications and Devices (Optoelectronic Properties of Semiconductors and Superlattice). ISBN 13: 9781560329749. The concepts in this book will provide a comprehensive overview of the current state for a broad range of nitride semiconductor devices, as well as a detailed introduction to selected materials and processing issues of general relevance for these applications.

The III-nitride semiconductors AlN, GaN and InN are widely used in optoelectronic applications, including laser diodes and light emitting diodes (LEDs)–. Ultraviolet (UV) light emitters based on Al x Ga 1−x N alloys are currently of considerable interest for applications in water disinfection, solarblind communications, biohazard detection and polymer curing,. The III-nitride semiconductors AlN, GaN and InN are widely used in optoelectronic applications, including laser diodes and light emitting diodes (LEDs)

Semiconductor devices based on lattice mismatched heterostructures have been the subject of much study.

Semiconductor devices based on lattice mismatched heterostructures have been the subject of much study. Antimonide-Related Strained-Layer Heterostructures. M. O. Manasreh December 23, 1997.

These semiconductors have direct energy-band gaps, and therefore they can allow the fabrication of luminescence devices . Properties of III-V Compounds.

These semiconductors have direct energy-band gaps, and therefore they can allow the fabrication of luminescence devices that produce light at high intensity, and their stabilities to high temperatures and good thermal conductivities make them potentially valuable for the fabrication of high power transistors.

All optoelectronic applications based on III-nitrides are due to their unique optical properties and characterizations of. .Engineering & Technology.

All optoelectronic applications based on III-nitrides are due to their unique optical properties and characterizations of III-nitride. Electrical & Electronic Engineering. Electromagnetics & Microwaves. Electrical Engineering Communications. Optics & optoelectronics.

The book examines these applications and presents a broad and in-depth look at the basic electronic and optical properties of diluted .

The book examines these applications and presents a broad and in-depth look at the basic electronic and optical properties of diluted nitrides. Co-authored by a group of leading scientists in the field, this book brings the reader up to speed on the development and current state of diluted nitride applications, as well as the technologies to be developed in the near future

The transport properties of the III-nitride . Heterostructures are ubiquitous of semiconductor devices, and most of semiconductor devices have two or more semiconductor materials.

The transport properties of the III-nitride d Schottky junctions are also included. In addition, their applications toward UV and IR detectors are discussed. III-Nitride-based heterostructures are well suited for the fabrication of various optoelectronic devices such as light-emitting diodes (LEDs), laser diodes (LDs), uency field-effect transistors (FETs), and tandem solar cells because of their inherent properties.

Within the III-V semiconductors there are the nitride semiconductors subset. GaN. GaN and its alloys offer many advantages compared to a III-As system, particularly a much wider range of energy bandgaps. InN is a heavily unintentionally n-type doped system, due to defects within the lattice, and the property of the branch point energy being well above the conduction band minimum, making the defects donor-like.

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The concepts in this book will provide a comprehensive overview of the current state for a broad range of nitride semiconductor devices, as well as a detailed introduction to selected materials and processing issues of general relevance for these applications. This compilation is very timely given the level of interest and the current stage of research in nitride semiconductor materials and device applications. This volume consists of chapters written by a number of leading researchers in nitride materials and device technology addressing Ohmic and Schottky contacts, AIGalnN multiple quantum well laser diodes, nitride vertical cavity emitting lasers, and ultraviolet photodetectors. This unique volume provides a comprehensive review and introduction to application and devices based on GaN and related compounds for newcomers to the field and stimulus to further advances for experienced researchers.